IRFB4227PBF
| Manufacturer Part Number: IRFB4227PBF | Manufacturer / Brand: Infineon |
| Part of Description: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg | Lead Free Status / RoHS Status:  Lead free / RoHS Compliant |
| Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Product parameters
| Manufacturer | Infineon |
| Technology | Si |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 200 V |
| Id – Continuous Drain Current | 65 A |
| Rds On – Drain-Source Resistance | 24 mOhms |
| Vgs – Gate-Source Voltage | – 30 V, + 30 V |
| Vgs th – Gate-Source Threshold Voltage | 1.8 V |
| Qg – Gate Charge | 70 nC |
| Minimum Operating Temperature | – 40 C |
| Maximum Operating Temperature | + 175 C |
| Pd – Power Dissipation | 330 W |
| Channel Mode | Enhancement |
| Packaging | Tube |
| Brand | Infineon Technologies |
| Configuration | Single |
| Fall Time | 31 ns |
| Forward Transconductance – Min | 49 S |
| Height | 15.65 mm |
| Length | 10 mm |
| Product Type | MOSFET |
| Rise Time | 20 ns |
| Factory Pack Quantity | 1000 |
| Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 33 ns |
| Width | 4.4 mm |
| Unit Weight | 0.068784 oz |
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