IPD60N10S4L-12
| Manufacturer Part Number: IPD60N10S4L-12 | Manufacturer / Brand: Infineon |
| Part of Description: MOSFET N-Ch 100V 60A DPAK-2 | Lead Free Status / RoHS Status:  Lead free / RoHS Compliant |
| Ship From: HK/Shen Zhen | Shipment Way: DHL/Fedex/TNT/UPS |
Product parameters
| Manufacturer | Infineon |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds – Drain-Source Breakdown Voltage | 100 V |
| Id – Continuous Drain Current | 60 A |
| Rds On – Drain-Source Resistance | 9.8 mOhms |
| Vgs – Gate-Source Voltage | – 16 V, + 16 V |
| Vgs th – Gate-Source Threshold Voltage | 1.1 V |
| Qg – Gate Charge | 49 nC |
| Minimum Operating Temperature | – 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd – Power Dissipation | 94 W |
| Channel Mode | Enhancement |
| Series | XPD60N10 |
| Packaging | MouseReel |
| Brand | Infineon Technologies |
| Configuration | Single |
| Fall Time | 21 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Product Type | MOSFET |
| Rise Time | 3 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 20 ns |
| Typical Turn-On Delay Time | 4 ns |
| Width | 6.22 mm |
| Unit Weight | 0.011640 oz |
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