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IPD30N10S3L-34

Manufacturer Part Number: IPD30N10S3L-34 Manufacturer / Brand: Infineon
Part of Description: MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:
IPD30N10S3L-34.pdf

Product parameters

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 100 V
Id – Continuous Drain Current 30 A
Rds On – Drain-Source Resistance 31 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 1.2 V
Qg – Gate Charge 24 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 57 W
Channel Mode Enhancement
Qualification AEC-Q101
Tradename OptiMOS
Series OptiMOS-T
Packaging MouseReel
Brand Infineon Technologies
Configuration Single
Fall Time 3 ns
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 4 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 6 ns
Width 6.22 mm
Part # Aliases SP000261248 IPD3N1S3L34XT IPD30N10S3L34ATMA1
Unit Weight 0.011640 oz

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